Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD)

US7338828B2 · kind B2 · utility

Assignees

• The Regents of the University of California · US
• Japan Science and Technology Agency · JP

Inventors

• Bilge M. Imer · Goleta, US
• James S. Speck · Fremont, US
• Steven P. DenBaars · Goleta, US
• Shuji Nakamura · Goleta, US

Key dates

• Filing date: May 31, 2006
• Grant date: Mar 4, 2008
• Expiry date: May 31, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0262
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane silicon carbide (m-SiC) substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer such as an aluminum nitride (AlN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the nucleation layer using MOCVD.