Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method
US7339195B2 · kind B2 · utility
4Cited by
4References
18Claims
0Family size
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Key dates
| Filing date | Jun 25, 2003 |
| Grant date | Mar 4, 2008 |
| Priority date | — |
| Expiry date | Jun 25, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/811
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.