Semiconductor device including a group III-V nitride semiconductor
US7339207B2 · kind B2 · utility
14Cited by
6References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2006 |
| Grant date | Mar 4, 2008 |
| Priority date | — |
| Expiry date | Jun 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has: a buffer layer formed on a conductive substrate and made of AlxGa1−xN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type AlyGa1−N; and a source electrode, a drain electrode and a gate electrode which are selectively formed on the element-forming layer. The source electrode is filled in a through hole provided in the buffer layer and the element-forming layer, and is thus electrically connected to the conductive substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.