MIS-based sensors with hydrogen selectivity
US7340938B2 · kind B2 · utility
1Cited by
10References
23Claims
0Family size
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Key dates
| Filing date | Feb 24, 2006 |
| Grant date | Mar 11, 2008 |
| Priority date | — |
| Expiry date | Feb 24, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/414
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The invention provides hydrogen selective metal-insulator-semiconductor sensors which include a layer of hydrogen selective material. The hydrogen selective material can be polyimide layer having a thickness between 200 and 800 nm. Suitable polyimide materials include reaction products of benzophenone tetracarboxylic dianhydride 4,4-oxydianiline m-phenylene diamine and other structurally similar materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.