Semiconductor device and method of manufacturing the same
US7341908B2 · kind B2 · utility
0Cited by
6References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2006 |
| Grant date | Mar 11, 2008 |
| Priority date | — |
| Expiry date | May 25, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a semiconductor device including a reliable interconnect and a method of manufacturing the same. The semiconductor device includes a substrate, an inter-metal dielectric (IMD) pattern having an opening, an amorphous metallic nitride layer formed on the inner surface of the opening, a diffusion barrier layer formed on the amorphous metallic nitride layer, and a conductive layer filled into the opening having the diffusion barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.