Method for transferring a semiconductor body from a growth substrate to a support material

US7341925B2 · kind B2 · utility

Assignee

• OSRAM GmbH · DE

Inventors

• Michael Kelly · Queen Creek, US
• Oliver Ambacher · Neufahrn, DE
• Martin Stutzmann · Erding, DE
• Martin Brandt · Schömberg, DE
• Roman Dimitrov · San Jose, US
• Robert Handschuh · Burgkirchen an der Alz, DE

Key dates

• Filing date: Oct 6, 2005
• Grant date: Mar 11, 2008
• Expiry date: Oct 6, 2025

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/977
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for transferring a semiconductor body selected from the group consisting of a semiconductor layer, a semiconductor layer sequence or a semiconductor layer structure from a growth substrate to a support material. An interface between the growth substrate and the semiconductor body or a region in the vicinity of the interface is exposed to electromagnetic radiation through one of the semiconductor body and the growth substrate. A material at or in proximity to the interface is decomposed by absorption of the electromagnetic radiation in proximity to or at the interface so that the semiconductor body can be separated from the growth substrate. The semiconductor body is connected to the support material.