Patent · US Active

High-brightness light-emitting diode

US7342255B2 · kind B2 · utility

2Cited by
1References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 27, 2005
Grant dateMar 11, 2008
Priority date
Expiry dateAug 10, 2026

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/855

Abstract

A high-brightness light-emitting diode is disclosed. The high-brightness light-emitting diode, comprises: a chip; a base for holding the chip; and a transparent layer for covering the chip, wherein the chip is connected to an electrode by a metal wire. The improvement comprises an adhesive injection hole formed on the transparent layer for injecting a layer of fluorescent-powdered adhesive into it, thereby providing the light-emitting diode with the advantages such as good light collection and uniform light shape.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.