Semiconductor device
US7342312B2 · kind B2 · utility
14Cited by
0References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 29, 2005 |
| Grant date | Mar 11, 2008 |
| Priority date | — |
| Expiry date | Oct 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device has the CSP structure, and includes: a plurality of electrode pads formed on a semiconductor integrated circuit in order to input/output signals from/to exterior; solder bumps for making external lead electrodes; and rewiring. The solder bumps are arranged in two rows along the periphery of the semiconductor device. The electrode pads are arranged inside the outermost solder bumps so as to be interposed between the two rows of solder bumps. Each trace of the rewiring is extended from an electrode pad, and is connected to any one of the outermost solder bumps or any one of the inner solder bumps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.