Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same
US7342357B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2005 |
| Grant date | Mar 11, 2008 |
| Priority date | — |
| Expiry date | Dec 16, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8513
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A light emitting diode comprising an LED chip having a light emitting layer made of a nitride compound semiconductor and a light transmitting resin that includes a fluorescent material which absorbs at least a part of light emitted by the LED chip and emits light of a different wavelength, wherein the fluorescent material includes a fluorescent particles of small particle size and a fluorescent particles of large particle size, the fluorescent particles of large particle size being distributed in the vicinity of the LED chip in the light transmitting resin to form a wavelength converting layer, the fluorescent particles of small particle size being distributed on the outside of the wavelength converting layer in the light transmitting resin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.