Magnetoresistive effect having multiple base layers between an electrode and an antiferromagnetic layer, magnetic head, and magnetic recording device
US7342751B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2005 |
| Grant date | Mar 11, 2008 |
| Priority date | — |
| Expiry date | Mar 25, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The magnetoresistive effect element comprises an electrode layer 12 of a crystalline material; a base layer 14 of a conductive amorphous material formed over the electrode layer 12, an antiferromagnetic layer 18 of a crystalline material formed over the base layer 14, a ferromagnetic layer 20 formed over the antiferromagnetic layer 18 and having the magnetization direction defined by the antiferromagnetic layer 18, a nonmagnetic intermediate layer 22 formed over the ferromagnetic layer 20, a ferromagnetic layer 24 formed over the nonmagnetic intermediate layer 22 and having the magnetization direction changed by an external magnetic field, and an electrode layer 28 formed over the ferromagnetic layer 24.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.