Advanced valve metal anodes with complex interior and surface features and methods for processing same
US7342774B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2003 |
| Grant date | Mar 11, 2008 |
| Priority date | — |
| Expiry date | Sep 21, 2024 |
Classification
- Technology area (CPC A)Human Necessities
- CPC primaryA61N1/3956
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention generally relates to improved capacitors; in particular, the present invention provides advanced valve metal (AVM) anodes and methods for fabricating AVM anodes having complex surface and interior features for use in high energy density capacitors. Such anodes find use in high voltage capacitors incorporated into implantable medical devices (IMDs), among other uses. The AVM anodes may be pressed into virtually any arbitrary shape and may have a gradually changing (or substantially constant) density profile throughout the AVM anode. Such AVM anodes may also be perforated or shaped to receive one or more cathode members. The AVM anodes enhance packaging efficiency for compact high energy density capacitors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.