Ferroelectric polymer memory structure and method therefor
US7344897B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | May 4, 2005 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | Oct 29, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/00
Abstract
A ferroelectric polymer memory device and its method of formation are disclosed. In accordance with one embodiment, lower electrode memory device portions are formed using a damascene patterning process and upper electrode memory device portions are formed using a subtractive patterning process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.