Methods for nanowire growth
US7344961B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2005 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | Jun 8, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2949
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to methods to produce, process, and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides a method for producing nanowires that includes providing a thin film of a catalyst material with varying thickness on a substrate, heating the substrate and thin film, such that the thin film disassociates at the relatively thinner regions and vapor depositing a semiconductor onto the substrate to produce nanowires. A method is also provided in which two or more thin films of different materials are overlayed over a substrate, selectively etching the first underlying thin film to create a plurality of islands of the second thin film that mask portions of the first thin film and expose other portions and growing nanowires on the first thin film. Additional methods for producing nanowires are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.