Nanotube transistor and rectifying devices
US7345296B2 · kind B2 · utility
47Cited by
20References
73Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2005 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | Jul 12, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/962
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Single-walled carbon nanotube transistor and rectifying devices, and associated methods of making such devices include a porous structure for the single-walled carbon nanotubes. The porous structure may be anodized aluminum oxide or another material. Electrodes for source and drain of a transistor are provided at opposite ends of the single-walled carbon nanotube devices. A gate region may be provided one end or both ends of the porous structure. The gate electrode may be formed into the porous structure. A transistor of the invention may be especially suited for power transistor or power amplifier applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.