Nitride semiconductor device

US7345297B2 · kind B2 · utility

Assignee

• NICHIA CORPORATION · JP

Inventors

• Masahito Yamazoe · Anan, JP
• Masayuki Eguchi · Matsumoto, JP
• Hiroki Narimatsu · Anan, JP
• Kazunori Sasakura · Anan, JP
• Yukio Narukawa · Anan, JP

Key dates

• Filing date: Feb 8, 2005
• Grant date: Mar 18, 2008
• Expiry date: Jul 15, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/831

Abstract

A semiconductor device includes an active layer, an n-side contact layer, and a p-side contact layer. The nitride semiconductor device includes at least a first n-side layer, a second n-side layer, a third n-side layer and a fourth n-side layer formed in this order from the n-side contact layer between the n-side contact layer and the active layer, while at least the second n-side layer and the fourth n-side layer each contain an n-type impurity, and the concentration of the n-type impurity in at least the second n-side layer and the fourth n-side layer is higher than the concentration of the n-type impurity in the first n-side layer and the third n-side layer.