Nitride-based semiconductor component such as a light-emitting diode or a laser diode

US7345313B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Uwe Strauss · Bad Abbach, DE
• Andreas Weimar · Regensburg, DE

Key dates

• Filing date: Oct 28, 2002
• Grant date: Mar 18, 2008
• Expiry date: Oct 28, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/831

Abstract

A nitride-based semiconductor component having a semiconductor body (1) with a contact metalization (4) applied thereon. The semiconductor body (1) is provided with a protective layer which, if appropriate, also covers partial regions of the contact metalization (4) and which has a plurality of recesses (5) arranged near to one another.