High voltage semiconductor devices and methods for fabricating the same
US7345341B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2006 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | Mar 9, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
High voltage semiconductor devices and methods for fabricating the same are provided. An exemplary embodiment of a semiconductor device capable of high-voltage operation, comprising a substrate comprising a first well formed therein. A gate stack is formed overlying the substrate, comprising a gate dielectric layer and a gate electrode formed thereon. A channel well and a second well are formed in portions of the first well. A source region is formed in a portion of the channel well. A drain region is formed in a portion of the second well, wherein the gate dielectric layer comprises a relatively thinner portion at one end of the gate stack adjacent to the source region and a relatively thicker portion at one end of the gate stack adjacent to and directly contacts the drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.