Surface acoustic wave device
US7345400B2 · kind B2 · utility
166Cited by
15References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2007 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | Feb 14, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/02559
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In a surface acoustic wave device, electrode films constituting at least one IDT are disposed on a piezoelectric substrate, and an SiO2 film is arranged on the piezoelectric substrate so as to cover the electrode films. The film-thickness of the electrode films is in the range of about 1% to about 3% of the wavelength of an excited surface acoustic wave.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.