Method and apparatus for use of III-nitride wide bandgap semiconductors in optical communications
US7345812B2 · kind B2 · utility
1Cited by
8References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2004 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | Sep 11, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/1628
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present disclosure relates to the use of III-nitride wide bandgap semiconductor materials for optical communications. In one embodiment, an optical device includes an optical waveguide device fabricated using a III-nitride semiconductor material. The III-nitride semiconductor material provides for an electrically controllable refractive index. The optical waveguide device provides for high speed optical communications in an infrared wavelength region. In one embodiment, an optical amplifier is provided using optical coatings at the facet ends of a waveguide formed of erbium-doped III-nitride semiconductor materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.