Surface-emitting laser diode with tunnel junction and fabrication method thereof
US7346089B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2005 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | May 5, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A surface emitting semiconductor laser diode of a tunnel junction type includes a semiconductor substrate, a first reflector, a second reflector, an active region disposed in series between the first and second reflectors, and a tunnel junction region disposed in series between the first and second reflectors. The tunnel junction region includes a first semiconductor layer of a first conductive type and a second semiconductor layer of a second conductive type that forms a junction with the first semiconductor layer, the first semiconductor layer being composed of a supper-lattice layer that at least partially includes aluminum and is partially oxidized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.