Vertical cavity surface emitting laser including trench and proton implant isolation
US7346090B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2006 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | Oct 30, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A VCSEL with nearly planar intracavity contact. A bottom DBR mirror is formed on a substrate. A first conduction layer region is formed on the bottom DBR mirror. An active layer, including quantum wells, is on the first conduction layer region. A trench is formed into the active layer region. The trench is formed in a wagon wheel configuration with spokes providing mechanical support for the active layer region. The trench is etched approximately to the first conduction layer region. Proton implants are provided in the wagon wheel and configured to render the spokes of the wagon wheel insulating. A nearly planar electrical contact is formed as an intracavity contact for connecting the bottom of the active region to a power supply. The nearly planar electrical contact is formed in and about the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.