Method for producing a mask layout avoiding imaging errors for a mask
US7346885B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 23, 2005 |
| Grant date | Mar 18, 2008 |
| Priority date | — |
| Expiry date | Oct 10, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A final mask layout (20′) is produced by producing a provisional auxiliary mask layout in accordance with a predefined electrical circuit diagram and converting it into the final mask layout (20′) with the aid of an OPC method. Before carrying out the OPC method, with the provisional auxiliary mask layout (100), firstly a modified auxiliary mask layout (100′) is formed by arranging at least one optically non-resolvable auxiliary structure (130) between two mask structures (110, 120) of the provisional auxiliary mask layout (100). The optically non-resolvable auxiliary structure (130) is positioned between the two mask structures (110, 120) in a manner dependent on the structure size (B1, B2) of the two mask structures, (110, 120). An eccentric offset (V) of the optically non-resolvable auxiliary structure (130) between the two mask structures is effected in the case of differing structure sizes (ΔB) of the two mask structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.