Process for manufacturing a semiconductor device, a semiconductor device and a high-frequency circuit

US7348221B2 · kind B2 · utility

Assignee

• ATMEL Germany GmbH · DE

Inventor

• Christoph Bromberger · Heilbronn, DE

Key dates

• Filing date: Oct 5, 2005
• Grant date: Mar 25, 2008
• Expiry date: Nov 25, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/28518
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A process for manufacturing a semiconductor device, provides that a silicide layer is formed, an amorphous semiconductor layer is applied both to the silicide layer and to an open monocrystalline semiconductor region, adjacent to the silicide layer, and during a subsequent temperature treatment, the amorphous semiconductor layer is crystallized proceeding from the open, monocrystalline semiconductor region, acting as a crystallization nucleus, so that the silicide layer is covered at least partially by a crystallized, monocrystalline semiconductor layer.