CMOS transistor with high drive current and low sheet resistance

US7348248B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventor

• Shui-Ming Cheng · Baoshan, TW

Key dates

• Filing date: Jul 12, 2005
• Grant date: Mar 25, 2008
• Expiry date: May 12, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822

Abstract

A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate dielectric over a substrate, a gate electrode over the gate dielectric, a slim gate spacer along a side of the gate electrode, and a source/drain region substantially aligned with an edge of the slim gate spacer. The source/drain region includes a first implantation region having an overlap with the gate electrode, a second implantation region further away from the channel region than the first implantation region, and a third implantation region further away from the channel region than the second implantation region. The source/drain region preferably further comprises an epitaxy region spaced apart from the slim gate spacer.