Switch element, memory element and magnetoresistive effect element
US7348591B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2006 |
| Grant date | Mar 25, 2008 |
| Priority date | — |
| Expiry date | Aug 11, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/762
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A switch element includes a substrate; a plurality of carbon nanotubes provided upright on the substrate; magnetic particles arranged at tip ends of the carbon nanotubes respectively; and a plurality of conductive layers formed between base ends of the carbon nanotubes and the substrate. A switching operation of the switching element is performed in such a manner that the carbon nanotubes or the magnetic particles are brought into contact with each other according to an electrical potential between the conductive layers, and the carbon nanotubes are separated from each other when an electrical current flows through the carbon nanotubes with the carbon nanotubes or the magnetic particles brought into contact with each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.