Planar avalanche photodiode

US7348607B2 · kind B2 · utility

Assignee

• PICOMETRIX, LLC · US

Inventors

• Cheng C. Ko · Carson City, US
• Barry Levine · Livingston, US

Key dates

• Filing date: Feb 3, 2003
• Grant date: Mar 25, 2008
• Expiry date: Jul 4, 2023

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

The present invention includes a planar avalanche photodiode having a first n-type semiconductor layer defining a planar contact area, and a second n-type semiconductor layer having a p-type diffusion region. Further features of the structure includes an n-type semiconductor multiplication layer, an n-type semiconductor absorption layer, and a p-type contact layer. Further embodiments include a planar avalanche photodiode having a first n-type semiconductor layer defining a planar contact area, an n-type semiconductor multiplication layer, an n-type semiconductor absorption layer and a p-type semiconductor layer electrically coupled to a p-type contact layer.