Planar avalanche photodiode
US7348608B2 · kind B2 · utility
27Cited by
22References
41Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2004 |
| Grant date | Mar 25, 2008 |
| Priority date | — |
| Expiry date | May 9, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A planar avalanche photodiode includes a small localized contact layer on the top of the device produced by either a diffusion or etching process and a semiconductor layer defining a lower contact area. A semiconductor multiplication layer is positioned between the two contact areas and a semiconductor absorption layer is positioned between the multiplication layer and the upper contact layer. The photodiode has a low capacitance and a low field near the edges of the semiconductor multiplication and absorption layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.