Intelligent textile technology based on flexible semiconductor skins
US7348645B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 13, 2005 |
| Grant date | Mar 25, 2008 |
| Priority date | — |
| Expiry date | Sep 12, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor-containing flexible skin suitable for use in intelligent textile applications includes a metal layer, an insulating layer, and one or more semiconductor islands sandwiched between a first flexible polymer layer and a second flexible polymer layer. Various electronics and sensors can be advantageously incorporated on the semiconductor islands. The metal layer of the invention is patterned into conducting paths that allow electrical communication between the semiconductor islands and to any devices connected to flexible skin. Moreover, the insulating layer is disposed between the metal layer and semiconductor islands. An intelligent textile includes the semiconductor-containing flexible skin attached to a fabric. Specifically, opening in the flexible textile allow direct weaving with textiles. A method of forming the flexible skin and intelligent fabric is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.