Electromechanical memory cell with torsional movement
US7349236B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2005 |
| Grant date | Mar 25, 2008 |
| Priority date | — |
| Expiry date | Apr 27, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B9/06
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A memory cell uses a pair of cantilevers to store a bit of information. Changing the relative position of the cantilevers determines whether they are electrically conducting or not. The on and off state of this mechanical latch is switched by using, for example, electrostatic, electromagnetic or thermal forces applied sequentially on the two cantilevers to change their relative position. The amount of power required to change the state of the cell is reduced by supporting at least one of the cantilevers with at least one lateral projection that is placed in torsion during cantilever displacement. After a bit of data is written, the cantilevers are locked by mechanical forces inherent in the cantilevers and will not change state unless a sequential electrical writing signal is applied. The sequential nature of the required writing signal makes inadvertent, radiation or noise related data corruption unlikely.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.