Method for improving optical proximity correction
US7350183B2 · kind B2 · utility
209Cited by
9References
31Claims
0Family size
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Key dates
| Filing date | Nov 5, 2004 |
| Grant date | Mar 25, 2008 |
| Priority date | — |
| Expiry date | Dec 10, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70433
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for performing model based optical proximity correction (MBOPC) and a system for performing MBOPC is described, wherein the process model is decomposed into a constant process model term and a pattern dependent portion. The desired wafer target is modified by the constant process model term to form a simulation target that is used as the new target within the MBOPC process. The pattern dependent portion of the model is used as the process model in the MBOPC algorithm. This results final mask designs that result in improved across-chip line width variations, and a more robust MBOPC process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.