Peeling method and method of manufacturing semiconductor device
US7351300B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2002 |
| Grant date | Apr 1, 2008 |
| Priority date | — |
| Expiry date | Jul 4, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T156/1939
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer (11) and a second material layer (12) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer (12) or an interface thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.