Method of manufacturing crystalline film, method of manufacturing crystalline-film-layered substrate, method of manufacturing thermoelectric conversion element, and thermoelectric conversion element
US7351906B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2005 |
| Grant date | Apr 1, 2008 |
| Priority date | — |
| Expiry date | Oct 31, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/915
Abstract
It is often the case that a substrate suitable for epitaxial growth does not match a substrate desirable for the use in functional elements such as thermoelectric conversion elements or the like. The present invention makes it possible to separate a predetermined layered structure formed on a substrate therefrom through an action of water vapor. A method of manufacturing a crystalline film of the present invention includes the steps of: epitaxially growing on a substrate a crystalline film including a layered structure so that the layered structure comes into contact with the substrate; contacting water vapor supplied from a water vapor source with the layered structure in a chamber; and separating the layered structure that has been contacted with the water vapor from the substrate to obtain the crystalline film. The layered structure has a layer containing an alkali metal, and a layer containing an oxide of at least one element selected from the group consisting of Co, Fe, Ni, Mn, Ti, Cr, V, Nb, and Mo.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.