Cascode, cascode circuit and method for vertical integration of two bipolar transistors into a cascode arrangement

US7352051B2 · kind B2 · utility

Assignee

• ATMEL Germany GmbH · DE

Inventor

• Christoph Bromberger · Heilbronn, DE

Key dates

• Filing date: Aug 8, 2005
• Grant date: Apr 1, 2008
• Expiry date: Aug 20, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/643

Abstract

A cascode of a high-frequency circuit, includes a first transistor having a first base semiconductor region, a first collector semiconductor region and a first emitter semiconductor region, and a second transistor having a second base semiconductor region, a second collector semiconductor region and a second emitter semiconductor region. The first emitter semiconductor region of the first transistor and the second collector semiconductor region of the second transistor are geometrically arranged on top with respect to a wafer surface, while the first collector semiconductor region of the first transistor and the second emitter semiconductor region of the second transistor are geometrically arranged on the bottom with respect to the wafer surface.