Vertical cavity surface emitting laser diode and process for producing the same
US7352787B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2004 |
| Grant date | Apr 1, 2008 |
| Priority date | — |
| Expiry date | Mar 24, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A vertical cavity surface emitting laser diode includes a lower semiconductor reflector, an active region, an upper semiconductor reflector constituting a resonator with the lower semiconductor reflector, a metallic part being formed on the upper semiconductor reflector, which has a first aperture defining an output region of laser light generated in the active region, and a light confining region being provided between the metallic part and the lower semiconductor reflector, and having a second aperture defining an emission region of the laser light. The upper semiconductor reflector includes a lenticular medium having a convex surface toward the lower semiconductor reflector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.