Patent · US Expired

Method of IC fabrication, IC mask fabrication and program product therefor

US7353492B2 · kind B2 · utility

194Cited by
8References
27Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 26, 2005
Grant dateApr 1, 2008
Priority date
Expiry dateApr 29, 2026

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F1/36
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A method of forming integrated circuit (IC) chip shapes and a method and computer program product for converting an IC design to a mask, e.g., for standard cell design. Individual book/macro physical designs (layouts) are proximity corrected before unnesting and an outer proximity range is determined for each proximity corrected physical design. Shapes with a unique design (e.g., in boundary cells and unique instances of books) are tagged and the design is unnested. Only the unique shapes are proximity corrected in the unnested design, which may be used to make a mask for fabricating IC chips/wafers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.