Method for double-sided processing of thin film transistors

US7354809B2 · kind B2 · utility

Assignee

• Wisconsin Alumni Research Foundation · US

Inventors

• Hao Yuan · Lakewood, US
• Guogong Wang · Madison, US
• Mark A. Eriksson · Madison, US
• Paul G. Evans · Madison, US
• Max G. Lagally · Madison, US
• Zhenqiang Ma · Shanghai, CN

Key dates

• Filing date: Feb 13, 2006
• Grant date: Apr 8, 2008
• Expiry date: Jun 23, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/40

Abstract

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.