Methods of forming integrated circuit devices having carbon nanotube electrodes therein
US7354823B2 · kind B2 · utility
2Cited by
1References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2005 |
| Grant date | Apr 8, 2008 |
| Priority date | — |
| Expiry date | Aug 18, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An integrated circuit capacitor includes first and second electrodes and at least one dielectric layer extending between the first and second electrodes. The first electrode includes at least one carbon nanotube. The capacitor further includes an electrically conductive catalyst material. This catalyst material may be selected from the group consisting of iron, nickel and cobalt and alloys thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.