Methods of fabricating a semiconductor device using a dilute aqueous solution of an ammonia and peroxide mixture
US7354868B2 · kind B2 · utility
4Cited by
4References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2005 |
| Grant date | Apr 8, 2008 |
| Priority date | — |
| Expiry date | Apr 7, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02052
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform cleaning and/or wet etching treatment steps on the substrate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.