Thin-film transistor
US7355202B2 · kind B2 · utility
23Cited by
73References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2003 |
| Grant date | Apr 8, 2008 |
| Priority date | — |
| Expiry date | Aug 18, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/118
Abstract
A gate-insulated thin film transistor is disclosed. One improvement is that the thin film transistor is formed on a substrate through a blocking layer in between so that it is possible to prevent the transistor from being contaminated with impurities such as alkali ions which exist in the substrate. Also, a halogen is added to either or both of the blocking layer and a gate insulator of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.