High-efficiency light-emitting element
US7355210B2 · kind B2 · utility
38Cited by
5References
51Claims
0Family size
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Key dates
| Filing date | Feb 21, 2005 |
| Grant date | Apr 8, 2008 |
| Priority date | — |
| Expiry date | Sep 1, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
Abstract
A high-efficiency light-emitting element includes a substrate, a first nitride semiconductor layer formed on the substrate, a nitride light-emitting layer formed on the first nitride semiconductor layer, and a second nitride semiconductor layer formed on the nitride light-emitting layer including a plurality of hexagonal-pyramid cavities on the surface of the second nitride semiconductor layer opposite to the nitride light-emitting layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.