Electrode material and semiconductor element
US7355213B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2004 |
| Grant date | Apr 8, 2008 |
| Priority date | — |
| Expiry date | Dec 24, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
As a p-type ohmic contact electrode formation technique in a Group II-VI compound semiconductor, there is provided a material for forming an electrode that is low in resistance, stable, and not toxic, and is excellent in productivity, thereby providing an excellent semiconductor element. A semiconductor electrode material in the form of a material represented by a composition formula AxByCz where A: at least one element selected from Group 1B metal elements, B: at least one element selected from Group 8 metal elements, C: at least one element selected from S and Se), where X, Y, and Z are such that X+Y+Z=1, 0.20˜X˜0.35, 0.17˜Y˜0.30, and 0.45˜Z˜0.55.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.