Nonvolatile semiconductor memory device having nanoparticles for charge retention
US7355238B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 6, 2004 |
| Grant date | Apr 8, 2008 |
| Priority date | — |
| Expiry date | Dec 6, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/943
Abstract
A nonvolatile semiconductor memory device including a source region and a drain region formed on a surface of a semiconductor substrate, a channel-forming region formed so as to connect the source region and the drain region or so as to be sandwiched between the source region and the drain region, a tunnel insulating film formed in contact with the channel-forming region, a charge retention layer formed adjacently to the tunnel insulating film, a gate insulating film formed adjacently to the charge retention layer, and a control gate formed adjacently to the gate insulating film. The charge retention layer includes an insulating matrix having, per nonvolatile semiconductor memory device, one conductive nano-particle which is made of at least one single-element substance or chemical compound that functions as a floating gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.