Integrated passive devices with high Q inductors
US7355264B2 · kind B2 · utility
22Cited by
3References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2006 |
| Grant date | Apr 8, 2008 |
| Priority date | — |
| Expiry date | Sep 13, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/60
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The specification describes flip bonded dual substrate inductors wherein a portion of the inductor is constructed on a base IPD substrate, a mating portion of the inductor is constructed on a cover (second) substrate. The cover substrate is then flip bonded to the base substrate, thus mating the two portions of the inductor. Using this approach, a two level inductor can be constructed without using a multilevel substrate. Using two two-level substrates yields a four-level flip bonded dual substrate inductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.