Silicon film bulk acoustic wave device and process of the same
US7355324B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2004 |
| Grant date | Apr 8, 2008 |
| Priority date | — |
| Expiry date | Jul 21, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/173
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a film bulk acoustic wave device and a method of manufacturing the same, wherein comprising an acoustic reflective layer which is formed on a substrate by removing a sacrificial layer on the substrate and becomes an empty space; an oxidation protective film or etch protecting film which is formed in a pattern that divides a resonance region to form the acoustic reflective layer on the sacrificial layer; a thermal oxidation film which is formed by partially thermally oxidizing the sacrificial layer in an electrode region where the oxidation protective film or the etch protecting film is not formed; and a lower electrode, a piezoelectric thin film, and an upper electrode all of which are disposed on the thermal oxide. Further, the present invention is directed to a method of manufacturing the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.