Method and circuitry to generate a reference current for reading a memory cell, and device implementing same
US7355916B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 5, 2006 |
| Grant date | Apr 8, 2008 |
| Priority date | — |
| Expiry date | Sep 5, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4099
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
There are many inventions disclosed herein. In one aspect, the present inventions are directed to methods and circuitry to control, adjust, determine and/or modify the absolute and/or relative positioning or location (i.e., absolute or relative amount) of reference current which is employed by sensing circuitry to sense the data state of a memory cell during a read operation of one or more memory cells. The control, adjustment, determination and/or modification of the reference current levels may be implemented using many different, distinct and/or diverse techniques and circuitry, including both analog and digital techniques and circuitry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.