Semiconductor surface emitting device
US7356063B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2004 |
| Grant date | Apr 8, 2008 |
| Priority date | — |
| Expiry date | Oct 16, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32366
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This surface emitting semiconductor device 1 comprises a first conductivity type semiconductor region, an active layer, a second conductivity type semiconductor layer and current block semiconductor region. The first conductivity type semiconductor region is provided on a surface made of GaAs semiconductor. The active layer is provided on the first conductivity type semiconductor region. The active layer has a side surface. The second conductivity type semiconductor layer is provided on the active layer. The second conductivity type semiconductor layer has a side surface. The current block semiconductor region is provided on the side surface of the active layer and on the side surface of the second conductivity type semiconductor layer. The active layer is made of III-V compound semiconductor including at least nitrogen element as a V group element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.