Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
US7357138B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2003 |
| Grant date | Apr 15, 2008 |
| Priority date | — |
| Expiry date | Sep 5, 2024 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB08B7/0035
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A process for the removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance having a dielectric constant greater than silicon dioxide from a substrate by reacting the substance with a reactive agent that comprises at least one member from the group consisting a halogen-containing compound, a boron-containing compound, a hydrogen-containing compound, nitrogen-containing compound, a chelating compound, a carbon-containing compound, a chlorosilane, a hydrochlorosilane, or an organochlorosilane to form a volatile product and removing the volatile product from the substrate to thereby remove the substance from the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.