Method for structuring a semiconductor device
US7358181B2 · kind B2 · utility
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3References
21Claims
0Family size
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Key dates
| Filing date | Mar 9, 2005 |
| Grant date | Apr 15, 2008 |
| Priority date | — |
| Expiry date | Jun 14, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for structuring a laterally extending first layer in a semiconductor device with the aid of a reactive second layer, which together with the first layer to be structured forms first reaction products, which products are removed by material removal that acts selectively on the first reaction products, whereby the structuring takes place in a vertical direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.