Flip-chip light emitting diode and method of manufacturing the same
US7358541B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 3, 2004 |
| Grant date | Apr 15, 2008 |
| Priority date | — |
| Expiry date | Nov 5, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01
Abstract
Provided are a flip-chip light emitting diode (FCLED) and a method of manufacturing the same. The provided FCLED is formed by sequentially depositing an n-type cladding layer, an active layer, a p-type cladding layer, and a reflective layer on a substrate. The reflective layer is formed of the alloy of silver to which a solute element is added. According to the provided FCLED and the method of manufacturing the same, a thermal stability is improved to improve an ohmic contact characteristic to a p-type cladding layer, thus a wire bonding efficiency and a yield are improved when packaging the provided FCLED. In addition, the light emitting efficiency and the lifespan of the provided FCLED are improved due to a low specific-contact resistance and an excellent current-voltage characteristic.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.