Heterobipolar transistor and method of fabricating the same
US7358546B2 · kind B2 · utility
3Cited by
6References
1Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 2, 2006 |
| Grant date | Apr 15, 2008 |
| Priority date | — |
| Expiry date | Jun 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
The present invention realizes a heterobipolar transistor using a SiGeC base layer in order to improve its electric characteristics. Specifically, the distribution of carbon and boron within the base layer is controlled so that the concentration of boron is higher than the concentration of carbon on the side bordering on the emitter layer, and upon the formation of the emitter layer, both boron and carbon are dispersed into a portion of the emitter layer that comes into contact with the base layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.